?2002 fairchild semiconductor corporation rev. b, june 2002 ssp4N60B/sss4N60B ssp4N60B/sss4N60B 600v n-channel mosfet general description these n-channel enhancement mode power field effect transistors are produced using fairchild?s proprietary, planar, dmos technology. this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for high efficiency switch mode power supplies. features ? 4.0a, 600v, r ds(on) = 2.5 ? @v gs = 10 v ? low gate charge ( typical 22 nc) ? low crss ( typical 14 pf) ? fast switching ? 100% avalanche tested ? improved dv/dt capability ? to-220f package isolation = 4.0kv (note 6) absolute maximum ratings t c = 25c unless otherwise noted * drain current limited by maximum junction temperature thermal characteristics symbol parameter ssp4N60B sss4N60B units v dss drain-source voltage 600 v i d drain current - continuous (t c = 25c) 4.0 4.0 * a - continuous (t c = 100c) 2.5 2.5 * a i dm drain current - pulsed (note 1) 16 16 * a v gss gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 240 mj i ar avalanche current (note 1) 4.0 a e ar repetitive avalanche energy (note 1) 10 mj dv/dt peak diode recovery dv/dt (note 3) 5.5 v/ns p d power dissipation (t c = 25c) 100 33 w - derate above 25c 0.8 0.26 w/c t j , t stg operating and storage temperature range -55 to +150 c t l maximum lead temperature for soldering purposes, 1/8 " from case for 5 seconds 300 c symbol parameter ssp4N60B sss4N60B units r jc thermal resistance, junction-to-case max. 1.25 3.79 c / w r cs thermal resistance, case-to-sink typ. 0.5 -- c / w r ja thermal resistance, junction-to-ambient max. 62.5 62.5 c / w to-220 ssp series g s d s d g to-220f sss series g s d free datasheet http://
rev. b, june 2002 ssp4N60B/sss4N60B ?2002 fairchild semiconductor corporation (note 4) (note 4, 5) (note 4, 5) (note 4) electrical characteristics t c = 25c unless otherwise noted notes: 1. repetitive rating : pulse width limited by maximum junction temperature 2. l = 27.5mh, i as = 4.0a, v dd = 50v, r g = 25 ?, starting t j = 25c 3. i sd 4.0a, di/dt 300a/ s, v dd bv dss, starting t j = 25c 4. pulse test : pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature 6. only for back side in v iso = 4.0kv and t = 0.3s symbol parameter test conditions min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 a 600 -- -- v ? bv dss / ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25c -- 0.65 -- v/c i dss zero gate voltage drain current v ds = 600 v, v gs = 0 v -- -- 10 a v ds = 480 v, t c = 125c -- -- 100 a i gssf gate-body leakage current, forward v gs = 30 v, v ds = 0 v -- -- 100 na i gssr gate-body leakage current, reverse v gs = -30 v, v ds = 0 v -- -- -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2.0 -- 4.0 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 2.0 a -- 2.0 2.5 ? g fs forward transconductance v ds = 40 v, i d = 2.0 a -- 4.7 -- s dynamic characteristics c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0 mhz -- 710 920 pf c oss output capacitance -- 65 85 pf c rss reverse transfer capacitance -- 14 19 pf switching characteristics t d(on) turn-on delay time v dd = 300 v, i d = 4.0 a, r g = 25 ? -- 20 50 ns t r turn-on rise time -- 55 120 ns t d(off) turn-off delay time -- 70 150 ns t f turn-off fall time -- 55 120 ns q g total gate charge v ds = 480 v, i d = 4.0 a, v gs = 10 v -- 22 29 nc q gs gate-source charge -- 4.8 -- nc q gd gate-drain charge -- 8.5 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 4.0 a i sm maximum pulsed drain-source diode forward current -- -- 16 a v sd drain-source diode forward voltage v gs = 0 v, i s = 4.0 a -- -- 1.4 v t rr reverse recovery time v gs = 0 v, i s = 4.0 a, di f / dt = 100 a/ s -- 330 -- ns q rr reverse recovery charge -- 2.67 -- c free datasheet http://
?2002 fairchild semiconductor corporation rev. b, june 2002 ssp4N60B/sss4N60B 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10 -1 10 0 10 1 150 notes : 1. v gs = 0v 2. 250 s pulse test 25 i dr , reverse drain current [a] v sd , source-drain voltage [v] 246810 10 -1 10 0 10 1 150 o c 25 o c -55 o c notes : 1. v ds = 40v 2. 250 s pulse test i d , drain current [a] v gs , gate-source voltage [v] 0 4 8 12 16 20 24 0 2 4 6 8 10 12 v ds = 300v v ds = 120v v ds = 480v note : i d = 4.0 a v gs , gate-source voltage [v] q g , total gate charge [nc] 10 -1 10 0 10 1 0 500 1000 1500 c oss c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd notes : 1. v gs = 0 v 2. f = 1 mhz c rss c iss capacitance [pf] v ds , drain-source voltage [v] 024681012 0 2 4 6 8 10 12 v gs = 20v v gs = 10v note : t j = 25 r ds(on) [ ], drain-source on-resistance i d , drain current [a] 10 -1 10 0 10 1 10 -1 10 0 10 1 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v 5.5 v bottom : 5.0 v notes : 1. 250 s pulse test 2. t c = 25 i d , drain current [a] v ds , drain-source voltage [v] typical characteristics figure 5. capacitance characteristics figure 6. gate charge characteristics figure 3. on-resistance variation vs drain current and gate voltage figure 4. body diode forward voltage variation with source current and temperature figure 2. transfer characteristics figure 1. on-region characteristics free datasheet http://
?2002 fairchild semiconductor corporation rev. b, june 2002 ssp4N60B/sss4N60B -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 notes : 1. v gs = 10 v 2. i d = 2.0 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 notes : 1. v gs = 0 v 2. i d = 250 a bv dss , (normalized) drain-source breakdown vol tage t j , junction temperature [ o c] 25 50 75 100 125 150 0 1 2 3 4 i d , drain current [a] t c , case temperature [ ] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 dc 10 ms 1 ms 100 s operation in this area is limited by r ds(on) notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] typical characteristics (continued) figure 9-1. maximum safe operating area for ssp4N60B figure 10. maximum drain current vs case temperature figure 7. breakdown voltage variation vs temperature figure 8. on-resistance variation 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 100 ms dc 10 ms 1 ms 100 s operation in this area is limited by r ds(on) notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] figure 9-2. maximum safe operating area for sss4N60B free datasheet http://
?2002 fairchild semiconductor corporation rev. b, june 2002 ssp4N60B/sss4N60B typical characteristics (continued) 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 notes : 1. z jc (t) = 1.25 /w m ax. 2. d uty factor, d=t 1 /t 2 3. t jm - t c = p dm * z jc (t) sin gle pu lse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), therm al r esponse t 1 , square w ave pulse duration [sec] figure 11-1. transient thermal response curve for ssp4N60B t 1 p dm t 2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 notes : 1. z jc (t) = 3.79 /w m ax. 2. d uty factor, d=t 1 /t 2 3. t jm - t c = p dm * z jc (t) sin gle pu lse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), therm al r esponse t 1 , square w ave pulse duration [sec] figure 11-2. transient thermal response curve for sss4N60B t 1 p dm t 2 free datasheet http://
?2002 fairchild semiconductor corporation rev. b, june 2002 ssp4N60B/sss4N60B charge v gs 10v q g q gs q gd 3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut charge v gs 10v q g q gs q gd 3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut v gs v ds 10% 90% t d(on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs v gs v ds 10% 90% t d(on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs e as =li as 2 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time 10v dut r g l i d t p e as =li as 2 ---- 2 1 e as =li as 2 ---- 2 1 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time 10v dut r g l l i d i d t p gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms free datasheet http://
?2002 fairchild semiconductor corporation rev. b, june 2002 ssp4N60B/sss4N60B peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period -------------------------- free datasheet http://
rev. b, june 2002 ?2002 fairchild semiconductor corporation ssp4N60B/sss4N60B dimensions in millimeters package dimensions 4.50 0.20 9.90 0.20 1.52 0.10 0.80 0.10 2.40 0.20 10.00 0.20 1.27 0.10 ?.60 0.10 (8.70) 2.80 0.10 15.90 0.20 10.08 0.30 18.95max. (1.70) (3.70) (3.00) (1.46) (1.00) (45 ) 9.20 0.20 13.08 0.20 1.30 0.10 1.30 +0.10 ?.05 0.50 +0.10 ?.05 2.54typ [2.54 0.20 ] 2.54typ [2.54 0.20 ] to-220 dimensions in millimeters free datasheet http://
rev. b, june 2002 ?2002 fairchild semiconductor corporation ssp4N60B/sss4N60B dimensions in millimeters package dimensions (continued) (7.00) (0.70) max1.47 (30 ) #1 3.30 0.10 15.80 0.20 15.87 0.20 6.68 0.20 9.75 0.30 4.70 0.20 10.16 0.20 (1.00x45 ) 2.54 0.20 0.80 0.10 9.40 0.20 2.76 0.20 0.35 0.10 3.18 0.10 2.54typ [2.54 0.20 ] 2.54typ [2.54 0.20 ] 0.50 +0.10 0.05 to-220f dimensions in millimeters free datasheet http://
disclaimer fairchild semiconductor reserves the right to make changes without further notice t o any products herein t o improve reliability , function or design. fairchild does not assume any liability arising out of the applica tion or use of any product or circuit described herein; neither does it convey any license under its p a tent rights, nor the rights of others. trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information preliminary no identification needed obsolete this datasheet contains the design specifications for product development. specifications may change in any manner without notice. this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. formative or in design first production full production not in production optologic optoplanar? pacman? pop? power247? powertrench qfet? qs? qt optoelectronics? quiet series? silent switcher fastr? frfet? globaloptoisolator? gto? hisec? i 2 c? isoplanar? littlefet? microfet? micropak? microwire? rev. h7 a acex? bottomless? coolfet? crossvolt ? dome? ecospark? e 2 cmos tm ensigna tm fact? fact quiet series? fast smart start? spm? stealth? supersot?-3 supersot?-6 supersot?-8 syncfet? tinylogic? trutranslation? uhc? ultrafet a a a vcx? a free datasheet http://
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